According to Maxwell’s theory, the optical transmission characteristics in GeSi/Si superlattice nanocrystalline layer h......

Based on the analysis of vertical electric potential distribution across the dual-channel strained p-type Si/strained Si......

A high power semiconductor laser diode with a tapered and cascaded active multimode interferometer (MMI) cavity was desi......

In order to improve the performance of optical wavelength-selective switches based on double micro-ring resonators, an a......

High-strain InGaAs/GaAs quantum wells(QWs) are grown by low-pressure metal-organic chemical vapor deposition(LP-MOCVD). ......

用低压金属有机物气相外延(LP-MOCVD)技术,采用低温缓冲层生长法,在GaAs(100)衬底上直接生长了高质量的InP外延层.1.2 μm InP(004......

用改进的变形参数法求得了激励的幅值不是小量时Mathieu方程的周期解及过渡曲线。...

采用第一性原理赝势平面波方法对（100）应变下正交相Ca2P0.25Si0.75的能带结构及光学性质进行模拟计算.计算结果表明：（100）面在晶格发生1......

为避免应变Si沟道(Strained Si channel)CMOS工艺中的高温过程,通过选择合适的离子注入能量和剂量,采用快速热退火(RTP)工艺,制备......